WSD100N06GDN56 N-seanail 60V 100A DFN5X6-8 WINSOK MOSFET
Sealladh farsaing air toradh WINSOK MOSFET
Is e bholtadh WSD100N06GDN56 MOSFET 60V, is e an sruth 100A, is e an aghaidh 3mΩ, is e an sianal N-sianal, agus is e am pasgan DFN5X6-8.
Raointean tagraidh WINSOK MOSFET
Solar cumhachd meidigeach MOSFET, PDs MOSFET, drones MOSFET, toitean dealanach MOSFET, prìomh innealan MOSFET, agus innealan cumhachd MOSFET.
Tha WINSOK MOSFET a’ freagairt ri àireamhan stuthan branda eile
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.
Paramadairean MOSFET
| samhladh | Paramadair | Rangachadh | Aonadan | ||
| VDS | Drain-Source Voltage | 60 | V | ||
| VGS | Voltage Gate-Source | ±20 | V | ||
| ID1,6 | Drèanadh leantainneach an-dràsta | TC = 25 ° C | 100 | A | |
| TC = 100 ° C | 65 | ||||
| IDM2 | Drèan pulsed an-dràsta | TC = 25 ° C | 240 | A | |
| PD | Sgaoileadh cumhachd as àirde | TC = 25 ° C | 83 | W | |
| TC = 100 ° C | 50 | ||||
| IAS | Maoim-sneachda an-dràsta, buille singilte | 45 | A | ||
| EAS3 | Singilte Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Teòthachd Junction as àirde | 150 | ℃ | ||
| TSTG | Raon Teòthachd stòraidh | -55 gu 150 | ℃ | ||
| RTHA1 | Snaim Resistance Teirmeach gu àrainneachd | Stàit Seasmhach | 55 | ℃/W | |
| RθJC1 | Frith-aghaidh teirmeach - Snaim ri cùis | Stàit Seasmhach | 1.5 | ℃/W | |
| samhladh | Paramadair | Cùmhnantan | Min. | Taidhp. | Max. | Aonad | |
| Statach | |||||||
| V(BR) DSS | Voltage Briseadh sìos Drain-Source | VGS = 0V, ID = 250 μA | 60 | V | |||
| IDSS | Drèanadh bholtaids geata neoni an-dràsta | VDS = 48 V, VGS = 0V | 1 | µa | |||
| TJ=85°C | 30 | ||||||
| IGSS | Aodion geata an-dràsta | VGS = ±20V, VDS = 0V | ±100 | nA | |||
| Air Feartan | |||||||
| VGS(TH) | Voltage Gate Threshold | VGS = VDS, IDS = 250 µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(air)2 | Drain-Source Resistance air-stàite | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Ag atharrachadh | |||||||
| Qg | Cìs geata iomlan | VDS = 30V VGS = 10V ID=20A | 58 | nC | |||
| Qgs | Cìs Gate-Sour | 16 | nC | ||||
| Qgd | Cìs geata-drain | 4.0 | nC | ||||
| td (air) | Uair dàil tionndaidh air | VGEN=10V VDD = 30V ID=20A RG=Ω | 18 | ns | |||
| tr | Turn-on Rise Time | 8 | ns | ||||
| td (dheth) | Cuir dheth an ùine dàil | 50 | ns | ||||
| tf | Cuir dheth an t-àm tuiteam | 11 | ns | ||||
| Rg | Frith-aghaidh | VGS = 0V, VDS = 0V, f = 1MHz | 0.7 | Ω | |||
| fiùghantach | |||||||
| Ciss | Ann an Capacitance | VGS = 0V VDS = 30V f = 1 MHz | 3458 | pF | |||
| Cos | A-mach Capacitance | 1522 | pF | ||||
| Crs | Comas gluasaid air ais | 22 | pF | ||||
| Feartan Diode Drain-Source agus Ìrean as àirde | |||||||
| IS1,5 | Stòr leantainneach an-dràsta | VG = VD = 0V , Feachd an-dràsta | 55 | A | |||
| ISM | Stòr Pulsed an-dràsta3 | 240 | A | ||||
| VSD2 | Voltage air adhart Diode | ISD = 1A , VGS = 0V | 0.8 | 1.3 | V | ||
| trr | Ùine ath-bheothachaidh air ais | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Cìs Ath-bheothachaidh air ais | 33 | nC | ||||
